Method for forming image through reaction development
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United States of America Patent
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Dec 29, 2009
Grant Date -
Dec 2, 2004
app pub date -
Oct 4, 2002
filing date -
Oct 5, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention relates to a reaction development patterning process wherein a photo resist layer masked by a desired pattern is irradiated using ultraviolet light and this layer is subsequently washed using a solvent solution containing alkali characterized by said photo resist layer comprising a condensation type polymer containing in the main chain carbonyl groups (C═O) bonded to hetero atoms and a photo acid generating agent and said alkali being an amine. This reaction development patterning process is characterized by being able to use as a photo resist target resins containing bonds having low reactivity toward nucleophilic reagents, for example, condensation type polymers containing any one of bonds such as carbonate, ester, urethane and amide.
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