Method for producing single crystal silicon carbide
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United States of America Patent
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Dec 29, 2009
Grant Date -
Feb 12, 2009
app pub date -
Oct 14, 2008
filing date -
Jun 4, 2001
priority date (Note) -
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Abstract
or less and a crystal terrace of 10 micrometer or more is obtained by a high-temperature liquid phase growth method using a very thin Si melt layer. The method does not require temperature difference control between the growing crystal surface and a raw material supply polycrystal and preparation of a doped single crystal SiC is possible.
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