Crystallizing silicon using a laser beam transmitted through a mask
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United States of America Patent
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Dec 22, 2009
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app pub date -
Jun 22, 2004
filing date -
Aug 18, 2003
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Abstract
An laser crystallization device and a method for crystallizing silicon by using the same is disclosed, to carry out the crystallization process at both the X-axis and Y-axis directions without rotation of a stage, wherein the laser crystallization device is includes a mask including first and second regions, the first region having an open part oriented in the X-axis direction, and the second region having an open part oriented in the Y-axis direction. A crystallization method includes positioning a substrate having an amorphous silicon layer on a stage; arranging a mask corresponding to the substrate to form first and second crystallizing blocks on irradiation of laser beam, the mask including a first region having a plurality of open parts oriented along the X-axis direction, and a second region having a plurality of open parts oriented along the Y-axis direction; crystallizing the substrate along the X-axis direction when the first region is open, and the stage is moved along the X-axis direction; and crystallizing the substrate along for the Y-axis direction of when the second region is open, and the stage is moved along the Y-axis direction.
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