Junction field effect dynamic random access memory cell and content addressable memory cell
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United States of America Patent
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Dec 15, 2009
Grant Date -
Nov 20, 2008
app pub date -
May 17, 2007
filing date -
May 17, 2007
priority date (Note) -
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Abstract
A semiconductor memory device including a dynamic random access memory (DRAM) cell and a ternary content addressable memory (TCAM) cell is disclosed. The DRAM cell may include a data storing portion and a data read portion. The data storing portion and data read portion comprising p-channel junction field effect transistors. The TCAM cell including an x-cell, y-cell, and comparator circuit. The x-cell, y-cell, and comparator circuits comprising p-channel JFETs.
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