Thin-film transistor with semiconductor layer and off-leak current characteristics
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United States of America Patent
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Dec 15, 2009
Grant Date -
Sep 29, 2005
app pub date -
Jan 6, 2005
filing date -
Jan 9, 2004
priority date (Note) -
Expired
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Abstract
Recognizing the phenomenon that the film thickness of a semiconductor layer causes shift in the OFF-leak current characteristic that corresponds to back-gate voltage of a thin-film transistor, the average film thickness of a semiconductor layer is prescribed such that the shift of the OFF-leak current characteristic is reduced. Alternatively, the film thickness distribution (the ratio of the occurrence of each region having different film thickness) in the direction of the channel width of the semiconductor layer is prescribed.
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