Film forming method employing reactive and reducing gases and substrate formed by the method
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United States of America Patent
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Dec 15, 2009
Grant Date -
Aug 21, 2003
app pub date -
Feb 11, 2003
filing date -
Feb 15, 2002
priority date (Note) -
Expired
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Abstract
A film forming method comprising: supplying a reactive gas comprising a compound including a metal atom between facing electrodes; arranging a substrate between the electrodes; making the reactive gas in a plasma state by applying a voltage between the electrodes under atmospheric pressure or under a pressure in a vicinity of the atmospheric pressure and discharging; and forming a metal film on a surface of the substrate by supplying a reducing gas having a reducing property into a plasma atmosphere in which the reactive gas in the plasma state exists.
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