Bipolar transistor including a base layer containing carbon atoms and having three distinct layers being doped with a trivalent substance
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United States of America Patent
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Dec 8, 2009
Grant Date -
Jun 16, 2005
app pub date -
Dec 20, 2002
filing date -
Dec 27, 2001
priority date (Note) -
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Abstract
A transistor includes an emitter, a collector, and a base layer having a base contact. The base layer includes an intrinsic region between the emitter and the collector, an extrinsic region between the intrinsic region and the base contact, and a first doping layer that is doped with a trivalent substance, that extends into the extrinsic region, and that is counter-doped with a pentavalent substance in a region adjacent to the emitter.
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