Method for one-to-one polishing of silicon nitride and silicon oxide
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United States of America Patent
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Dec 8, 2009
Grant Date -
May 22, 2008
app pub date -
Nov 22, 2006
filing date -
Nov 22, 2006
priority date (Note) -
Expired
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Abstract
The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.
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