Model-based pattern characterization to generate rules for rule-model-based hybrid optical proximity correction
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 1, 2009
Grant Date -
Apr 20, 2006
app pub date -
Sep 8, 2005
filing date -
Oct 15, 2004
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A system and method are provided for analyzing layout patterns via simulation using a lithography model to characterize the patterns and generate rules to be used in rule-based optical proximity correction (OPC). The system and method analyze a series of layout patterns conforming to a set of design rules by simulation using a lithography model to obtain a partition of the pattern spaces into one portion that requires only rule-based OPC and another portion that requires model-based OPC. A corresponding hybrid OPC system and method are also introduced that utilize the generated rules to correct an integrated circuit (IC) design layout which reduces the OPC output complexity and improves turnaround time.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully