Method and media for improving ferroelectric domain stability in an information storage device
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United States of America Patent
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Dec 1, 2009
Grant Date -
Jan 22, 2009
app pub date -
Jul 16, 2007
filing date -
Jul 16, 2007
priority date (Note) -
Expired
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Abstract
A media for an information storage device includes a substrate of single-crystal silicon, a buffer layer of an epitaxial single crystal insulator formed over the substrate, a bottom electrode layer of an epitaxial single crystal conductor formed over the buffer layer, a ferroelectric layer of an epitaxial single crystal ferroelectric material formed over the bottom electrode layer, and an overlayer of an epitaxial single crystal material formed over the ferroelectric layer. Dipole charges generally having a first orientation exist at an interface between the bottom electrode layer and the ferroelectric layer includes, while dipole charges generally having a second orientation opposite the first orientation exist at an interface between the ferroelectric layer and the overlayer includes.
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