Method for improved formation of nickel silicide contacts in semiconductor devices
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United States of America Patent
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Nov 24, 2009
Grant Date -
Jun 12, 2008
app pub date -
Dec 6, 2006
filing date -
Dec 6, 2006
priority date (Note) -
Expired
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Abstract
A method of forming silicide contacts for semiconductor devices includes subjecting a silicon containing semiconductor wafer to a degas treatment at an initial degas temperature of about 250 to about 400° C., transferring the semiconductor wafer from a degas chamber to a deposition chamber, depositing a nickel containing layer over the wafer following transfer of the wafer from the degas chamber to the deposition chamber, and annealing the semiconductor wafer so as to create silicide regions at portions on the wafer where nickel material is formed over silicon.
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