Characterization of three-dimensional distribution of defects by X-ray topography

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United States of America Patent

PATENT NO 7620149
APP PUB NO 20090034681A1
SERIAL NO

12087402

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Abstract

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Provided is a method of determining a three-dimensional distribution of structural defects in a single crystal material, the method comprising: (a) disposing a single crystal sample on a holder, the sample being set to a symmetric reflection in the Bragg Geometry; (b) projecting a beam of incident x-rays on a predetermined crystal plane in the sample and reflecting the x-rays while the sample is azimuthally rotating with respect to an normal axis, the normal axis being perpendicular to the predetermined crystal plane; (c) obtaining geometrical measured values of a two-dimensional configuration of defects on the detector plane of a CCD detector; and (d) determining the three-dimensional distribution of the defects in the sample by formulating a geometrical relation between a three-dimensional configuration of defects on the sample and the geometrical measured values of the two-dimensional configuration of defects on the detector plane.

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Patent Owner(s)

Patent OwnerAddress
POSTECH FOUNDATION131 SAN HYOJA-DONG NAM-KU POHANG KYUNGSANGBOOK-DO
POSTECH ACADEMY-INDUSTRY FOUNDATION77 CHEONGAM-RO NAM-GU POHANG-SI GYEONGSANGBUK-DO 37673

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Je, Jung Ho Gyeongsangbuk-do , KR 19 37
Yi, Jae Mok Gyeongsangbuk-do , KR 2 3

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