Bi-axial texturing of high-K dielectric films to reduce leakage currents
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United States of America Patent
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Nov 17, 2009
Grant Date -
Jun 8, 2006
app pub date -
Dec 7, 2004
filing date -
Dec 7, 2004
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Abstract
The present invention is directed to a method of fabricating a high-K dielectric films having a high degree of crystallographic alignment at grain boundaries of the film. A disclosed method involves providing a substrate and then depositing a material used in forming the high-K dielectric film and also using an ion beam to assist in the preferential formation of crystal lattices having a selected crystallographic orientation. The resultant dielectric film having a high degree of crystallographic alignment at grain boundaries of the film. Another disclosed method involves providing a substrate and then angularly depositing a material onto the substrate in order to assist in the preferential formation of crystal lattices having a selected crystallographic orientation. The resultant dielectric film having a high degree of crystallographic alignment at grain boundaries of the film.
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