Method and apparatus for forming contact hole
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United States of America Patent
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Nov 17, 2009
Grant Date -
Oct 6, 2005
app pub date -
Mar 30, 2005
filing date -
Mar 31, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of forming a contact hole in an insulating film coating amorphous Si having an irregular surface formed on an insulating substrate, for connecting the amorphous Si to a conductor film formed on the insulating film, including: etching the insulating film using reactive ion etching to a depth whereat said irregularity does not disappear; and sputter-etching the surface of the amorphous Si.
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