Methods of forming capacitors
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United States of America Patent
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Nov 17, 2009
Grant Date -
Nov 5, 2009
app pub date -
May 2, 2008
filing date -
May 2, 2008
priority date (Note) -
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Abstract
A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.
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