GaN lasers on ALN substrates and methods of fabrication
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United States of America Patent
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Nov 10, 2009
Grant Date -
Dec 4, 2008
app pub date -
Aug 15, 2007
filing date -
May 31, 2007
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Abstract
Ga(In)N-based laser structures and related methods of fabrication are proposed where Ga(In)N-based semiconductor laser structures are formed on AlN or GaN substrates in a manner that addresses the need to avoid undue tensile strain in the semiconductor structure. In accordance with one embodiment of the present invention, a Ga(In)N-based semiconductor laser is provided on an AlN or GaN substrate provided with an AlGaN lattice adjustment layer where the substrate, the lattice adjustment layer, the lower cladding region, the active waveguiding region, the upper cladding region, and the N and P type contact regions of the laser form a compositional continuum in the semiconductor laser. Additional embodiments are disclosed and claimed.
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