Method for producing high purity silicon

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United States of America Patent

PATENT NO 7615202
APP PUB NO 20080241045A1
SERIAL NO

11885750

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Abstract

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An object of the invention is to provide a method for producing a large amount of inexpensive high purity silicon useful for a solar battery. Disclosed is a method for producing high purity silicon by migrating impurities in silicon to slag including performing a first slag purification of a first silicon, separating the slag from the first silicon after finishing the first slag purification, and feeding the separated slag to a second molten silicon in a second purification of the second silicon, wherein purity of said second silicon prior to purification is lower than purity of the first silicon after purification.

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Patent Owner(s)

Patent OwnerAddress
NIPPON STEEL MATERIALS CO LTDTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ito, Nobuaki Chiba , JP 134 323

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