Method of reducing stress-induced mechanical problems in optical components
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United States of America Patent
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Nov 10, 2009
Grant Date -
Jun 14, 2007
app pub date -
Nov 17, 2006
filing date -
Oct 11, 2001
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Abstract
A method of making optical quality films is described. A silica film is deposited on a wafer by PECVD (Plasma Enhanced Chemical Vapor Deposition). The deposited film is then subjected to a first heat treatment to reduce optical absorption, wafer warp, and compressive stress. A second film is deposited. This step is then followed by a second heat treatment to reduce optical absorption, wafer warp and tensile stress. The two heat treatments have similar temperature profiles.
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