Active input load wide bandwidth low noise HEMT amplifier
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United States of America Patent
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Nov 3, 2009
Grant Date -
Apr 26, 2007
app pub date -
Oct 21, 2005
filing date -
Oct 21, 2005
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Abstract
A relatively wide bandwidth low noise amplifier with an active input matching network. The active load maybe formed from a field effect transistor (FET) or high electron mobility transistor (HEMT) in a common gate configuration. The active load input matching network has a lower overall noise component to only transistor channel noise than reactive matching components, such as inductors and capacitors. By utilizing the active mode input matching network in accordance with the present invention, the circuit layout such amplifiers can be reduces significantly, for example, 23 mils×47 mils.
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