Semiconductor device having self-aligned contact
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United States of America Patent
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Nov 3, 2009
Grant Date -
Aug 17, 2006
app pub date -
Sep 21, 2005
filing date -
Feb 16, 2005
priority date (Note) -
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Abstract
A method of manufacturing semiconductor devices having self-aligned contacts is provided. Multiple isolation structures are formed on the substrate to define an active area. Multiple gate structures are formed on the substrate. Multiple doped areas are formed in the substrate beside each gate structure. Multiple first spacers are formed on the sidewalls of each of the gate structure. Multiple second spacers are formed on the sidewalls of each of the isolation structure. A dielectric layer is formed on the substrate. Then, a self-aligned process is performed to form multiple contact openings in the dielectric layer between the gate structures. The conductive material is filled in the contact openings.
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