Conductive silicon nitride materials and method for producing the same
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United States of America Patent
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Nov 3, 2009
Grant Date -
Mar 27, 2008
app pub date -
Sep 27, 2005
filing date -
Oct 1, 2004
priority date (Note) -
Expired
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Abstract
To provide a sintered silicon nitride with conductivity and densification, an oxide of titanium group elements, such as titanium oxide, hafnium oxide, zirconium oxide and the like, aluminum oxide and/or aluminum nitride is added as needed to silicon nitride-oxidant of rare-earth elements-aluminum oxide system or silicon nitride-oxide of rare-earth elements-magnesia system, and then specified quantity of carbon nonotube (CNT) is added to the above mixture. CNT generates silicon carbide after the reaction with contiguous or proximal silicon nitride and the like depending on the sintering duration at high temperature. Since silicon carbide is generated along with nanotubes, the silicon carbide functions as conductor with excellent heat resistance, corrosion resistance and the like.
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