High electron mobility transistor with mesa structure and reduced gate leakage current
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United States of America Patent
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Oct 27, 2009
Grant Date -
Jul 28, 2005
app pub date -
Jan 24, 2005
filing date -
Jan 23, 2004
priority date (Note) -
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Abstract
The semiconductor device (10) comprises a semiinsulating substrate (12), a layered structure (20) of compound semiconductor which is a mesa structure (18) and contains an active channel layer (14), a first and a second metal main electrodes (22a, 22b) which are provided on the layered structure (20), a first and a second ion implantation regions (40a, 40b) which are provided at the depth level below the active channel layer, and a metal control electrode (26) which is provided along the channel width direction from the first ion implantation region to the second ion implantation region, crossing over the upper side of the active channel layer.
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