Semiconductor device having strain-inducing substrate and fabrication methods thereof
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United States of America Patent
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Oct 20, 2009
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app pub date -
Jul 23, 2008
filing date -
May 4, 2007
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Abstract
A semiconductor device includes a semiconductor substrate that includes a substrate layer having a first composition of semiconductor material. A source region, drain region, and a channel region are formed in the substrate, with the drain region spaced apart from the source region and the gate region abutting the channel region. The channel region includes a channel layer having a second composition of semiconductor material. Additionally, the substrate layer abuts the channel layer and applies a stress to the channel region along a boundary between the substrate layer and the channel layer.
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