Semiconductor memory device having charge storage layer and method of manufacturing the same

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United States of America Patent

PATENT NO 7602011
APP PUB NO 20070228454A1
SERIAL NO

11802815

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Abstract

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are formed of metal oxide or metal nitride.

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Patent Owner(s)

Patent OwnerAddress
FUJITSU MICROELECTRONICS LIMITEDKANAGAWA 222-0033

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Inventor Name Address # of filed Patents Total Citations
Sugizaki, Taro Fujisawa , JP 31 1050

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