CMOS image sensor and method for fabricating the same
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United States of America Patent
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Oct 6, 2009
Grant Date -
Feb 15, 2007
app pub date -
Oct 19, 2006
filing date -
Jul 15, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A complementary metal-oxide semiconductor (CMOS) image sensor and a method for fabricating the same are disclosed. The image sensor includes a sub-layer having a photodiode and a plurality of transistors formed thereon, a pad insulating layer formed on the sub-layer, a micro-lens formed on the pad insulating layer, the micro-lens including a first insulating layer having an uneven surface and a second insulating layer covering upper and side surfaces of a projected portion of the first insulating layer to form a dome shape, and a planarization layer formed on the micro-lens, and a color filter formed on the planarization layer.
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