Method for fabricating a spacer layer for a magnetoresistive element
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United States of America Patent
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Sep 29, 2009
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app pub date -
Sep 7, 2004
filing date -
Sep 7, 2004
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Abstract
A method and system for manufacturing a spacer layer in a magnetoresistive element are described. The spacer layer resides between a free layer and a pinned layer. The method and system include providing a first metallic layer and oxidizing the first metallic layer in a first environment including at least oxygen and a first gas inert with respect to the first metallic layer. The method and system further include providing a second metallic layer and oxidizing the second metallic layer in a second environment including at least oxygen and a first gas inert with respect to the first metallic layer.
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