Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconductor device, and apparatus for manufacturing semiconductor device
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United States of America Patent
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Sep 29, 2009
Grant Date -
May 24, 2007
app pub date -
Feb 16, 2005
filing date -
Feb 16, 2004
priority date (Note) -
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Abstract
In a manufacturing method of a thin film transistor (1), the oxide film forming step is performed whereby: a process-target substrate (2) having a surface on which a gate oxide film (4) should be formed is immersed in an oxidizing solution containing a; active oxidizing species; and a gate oxide film (4) is formed through direct oxidation of polycrystalline silicon (51) on the process-target substrate (2). With this step, a silicon dioxide film (42) is formed while growing a silicon dioxide film (41) on the process-target substrate 2. Accordingly, the interface between the polycrystalline silicon (51) and the gate oxide film (4) is kept clean. The gate oxide film (4) is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor (1) contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.
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