CMOS image sensor and method for manufacturing the same
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United States of America Patent
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Sep 29, 2009
Grant Date -
Jul 5, 2007
app pub date -
Dec 21, 2006
filing date -
Dec 29, 2005
priority date (Note) -
Expired
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Abstract
A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor enlarges an area of a real image and prevents interference between adjacent pixels by forming a plurality of microlenses on a convex surface and forming a light blocking layer in the space between each of color filters. The CMOS image sensor can include photodiodes, a first planarization layer, R, G, B color filter layers, a second planarization layer having holes filled with a light blocking layer, and a plurality of microlenses.
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