Flexible single-crystal film and method of manufacturing the same
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United States of America Patent
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Sep 22, 2009
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app pub date -
Apr 28, 2004
filing date -
Apr 30, 2003
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Abstract
The present invention relates to a flexible single-crystal film and a method of manufacturing the same from a single-crystal wafer. That is, the present invention can manufacture a silicon-on-insulator (SOI) wafer comprising a base wafer, one or more buried insulator layers, and a single-crystal layer into a flexible single-crystal film with a desired thickness by employing various wafer thinning techniques. The method for manufacturing a flexible film comprises the steps of (i) providing a SOI wafer comprising a base wafer, one or more buried insulator layers on the base wafer, and a single-crystal layer on said one or more buried insulator layers, (ii) forming one or more protective insulator layers on said single-crystal layer, (iii) removing said base wafer, and (iv) removing one or more of the insulator layers.
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