Method of fabricating a diaphragm of a capacitive microphone device
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United States of America Patent
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Sep 8, 2009
Grant Date -
Oct 11, 2007
app pub date -
Jun 23, 2006
filing date -
Apr 10, 2006
priority date (Note) -
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Abstract
A method of fabricating a diaphragm of a capacitive microphone device is provided. First, a substrate is provided, and a dielectric layer is formed on a first surface of the substrate. Than, a plurality of silicon spacers are formed on a surface of the dielectric layer, and the dielectric layer is patterned to form a plurality of dielectric bumps. Subsequently, a diaphragm layer is formed on a surface of the silicon spacers, a surface of the dielectric bumps, and the first surface of the substrate so that the diaphragm layer has a corrugate structure by virtue of the dielectric bumps. Thereafter, a planarization layer is formed on the diaphragm layer, and a second surface of the substrate is etched to form a plurality of openings corresponding to the corrugate structure. Following that, the dielectric bumps exposed through the openings are removed, and the planarization layer is removed.
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