Circuit structure with a double-gate organic thin film transistor device and application thereof
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United States of America Patent
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Sep 1, 2009
Grant Date -
Nov 8, 2007
app pub date -
Jul 20, 2006
filing date -
May 3, 2006
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Abstract
This invention provides a circuit structure with a double-gate organic thin film transistor device and application thereof. A protection layer covered on an organic thin film transistor structure having a bottom gate is used as another gate insulating layer. A metal layer is formed on this gate insulating layer to serve as another gate. A double-gate structure is hence accomplished. The double-gate structure can be used in a circuit. By the double-gate structure the threshold voltage of the organic thin film transistor can be adjusted, and advantageously changing the characteristic of the organic thin film transistor to improve the accuracy of signal transmission.
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