Method for junction formation in a semiconductor device and the semiconductor device made thereof
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United States of America Patent
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Sep 1, 2009
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N/A
app pub date -
Aug 3, 2007
filing date -
Aug 4, 2006
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Abstract
Devices and methods for junction formation in manufacturing a semiconductor device are disclosed. The devices have shallow junction depths far removed from end-of range defects. The method comprises forming an amorphous region in a crystalline semiconductor such as silicon down to a first depth, followed by implantation of a substitutional element such as carbon to a smaller depth than the first depth. The region is then doped with suitable dopants, e.g. phosphorus or boron, and the amorphous layer recrystallized by a thermal process.
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