Method for fabricating capacitor of semiconductor memory device using amorphous carbon
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United States of America Patent
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Sep 1, 2009
Grant Date -
Jun 29, 2006
app pub date -
Dec 20, 2005
filing date -
Dec 28, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming storage node contact plugs penetrating into the inter-layer insulation layer; forming a stack structure formed by stacking a first protective barrier layer and a sacrificial layer on the inter-layer insulation layer; performing an etching process to the first protective barrier layer and the sacrificial layer in a manner to have a trenches opening upper portions of the storage node contact plugs; forming storage nodes having a cylinder type inside of the trenches; forming a second protective barrier layer filling the inside of the storage nodes having the cylinder type; removing the sacrificial layer through performing a wet dip-out process; removing the first protective barrier layer and the second protective barrier layer; and sequentially forming a dielectric layer and a plate node on the storage nodes.
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