Fabrication of MEMS devices with spin-on glass
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United States of America Patent
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Aug 25, 2009
Grant Date -
Jul 7, 2005
app pub date -
Feb 11, 2005
filing date -
Aug 23, 2002
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Abstract
A method of making an etched structure in the fabrication of a MEMS device involves depositing a bulk layer, typically of polysilicon, prone to surface roughness. At least one layer of photo-insensitive spin-on planarizing material, such as silicate-based spin-on glass, is formed on the bulk layer to reduce surface roughness. This is patterned with a photoresist layer. A deep etch is then performed through the photoresist layer into the bulk layer. This technique results in much more precise etch structures.
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