Semiconductor device having tin-based solder layer and method for manufacturing the same
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United States of America Patent
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Aug 25, 2009
Grant Date -
Aug 2, 2007
app pub date -
Feb 20, 2007
filing date -
Sep 8, 2004
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Abstract
A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.
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