Method of manufacturing photodiode
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United States of America Patent
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Aug 18, 2009
Grant Date -
Oct 13, 2005
app pub date -
Jul 30, 2004
filing date -
Apr 8, 2004
priority date (Note) -
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Abstract
A method of manufacturing of a photodiode is provided. The photodiode is formed on a substrate of a first conductive type. First, an isolation structure is formed in the substrate to define a photosensitive area in the substrate. Thereafter, trenches are formed in the substrate. Next, a doped layer of a second conductive type is formed on the substrate. The doped layer covers at least the inner wall of the trenches and a top portion of the substrate. The method of fabricating the photodiode can reduce overall processing time and cost and improve production efficiency.
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