Semiconductor device
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United States of America Patent
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Aug 4, 2009
Grant Date -
Aug 10, 2006
app pub date -
Jan 19, 2006
filing date -
Feb 4, 2005
priority date (Note) -
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Abstract
A semiconductor device having a bipolar transistor improved with heat dissipation. A semiconductor device having bipolar transistors formed in a plurality of device forming regions electrically isolated from each other by device isolation trenches traversing the semiconductor layer, in which a device isolation trench for each of unit bipolar transistors connected in parallel is removed and the plurality of unit bipolar transistors connected in series are entirely surrounded with one device isolation trench.
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