High resolution monitoring of CD variations
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United States of America Patent
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Jul 28, 2009
Grant Date -
Aug 30, 2007
app pub date -
Jan 24, 2007
filing date -
Feb 2, 2006
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Abstract
An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.
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