Integrated circuit with a trench capacitor structure and method of manufacture
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United States of America Patent
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Jul 21, 2009
Grant Date -
Nov 22, 2007
app pub date -
May 16, 2006
filing date -
May 16, 2006
priority date (Note) -
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Abstract
An integrated circuit device having a capacitor structure. In one form of the invention, an integrated circuit device includes a capacitor structure formed along a surface of a semiconductor layer. The capacitor structure includes a region formed in the semiconductor surface, a layer of dielectric material formed along a trench wall of the trench region and a first layer of doped polysilicon formed over the layer of dielectric material in the trench region. The capacitor structure further includes a second layer of doped polysilicon formed over the first layer of polysilicon.
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