Techniques for determining overlay and critical dimension using a single metrology tool
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United States of America Patent
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Jul 14, 2009
Grant Date -
N/A
app pub date -
Oct 25, 2006
filing date -
Mar 27, 2006
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Abstract
Disclosed are semiconductor targets for measuring with a metrology tool having at least two incident beam modules and techniques for measuring the same. In one embodiment, the target includes an overlay target and a critical dimension (CD) target in the form of periodic features, and the overlay and CD targets are spaced apart by a distance that substantially matches a bore distance between two of the incident beam modules of the metrology tool. In another embodiment, the target includes two overlay targets in the form of periodic features and that are spaced apart by a distance that substantially matches a bore distance between two of the incident beam modules of the metrology tool. In another embodiment, the target includes two CD targets in the form of periodic features and that are spaced apart by a distance that substantially matches a bore distance between two of the incident beam modules of the metrology tool.
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