Opening hard mask and SOI substrate in single process chamber
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 14, 2009
Grant Date -
Jul 26, 2007
app pub date -
Jan 25, 2006
filing date -
Jan 25, 2006
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Methods for opening a hard mask and a silicon-on-insulator substrate in a single process chamber are disclosed. In one embodiment, the method includes patterning a photoresist over a stack including an anti-reflective coating (ARC) layer, a silicon dioxide (SiO.sub.2) based hard mask layer, a silicon nitride pad layer, a silicon dioxide (SiO.sub.2) pad layer and the SOI substrate, wherein the SOI substrate includes a silicon-on-insulator layer and a buried silicon dioxide (SiO.sub.2) layer; and in a single process chamber: opening the ARC layer; etching the silicon dioxide (SiO.sub.2) based hard mask layer; etching the silicon nitride pad layer; etching the silicon dioxide (SiO.sub.2) pad layer; and etching the SOI substrate. Etching all layers in a single chamber reduces the turn-around-time, lowers the process cost, facilitates process control and/or improve a trench profile.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully