Semiconductor device and method for fabricating the same
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United States of America Patent
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Jul 7, 2009
Grant Date -
Apr 13, 2006
app pub date -
Nov 17, 2005
filing date -
May 27, 2003
priority date (Note) -
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Abstract
A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.
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