Semiconductor laser device
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United States of America Patent
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Jun 30, 2009
Grant Date -
Sep 11, 2008
app pub date -
Nov 2, 2007
filing date -
Mar 7, 2007
priority date (Note) -
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Abstract
A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. Further, an adhesive layer and a coating film are on the front facet, and an adhesive layer and a coating film are on the rear facet. The adhesive layers preferably have a thickness of 10 nm or less and preferably include an anodic oxide film of one of Al, Ti, Nb, Zr, Ta, Si, and Hf.
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