GaTe semiconductor for radiation detection
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United States of America Patent
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Jun 23, 2009
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Jan 1, 2009
app pub date -
Jun 29, 2007
filing date -
Jun 29, 2007
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Abstract
GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
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