Magnetic tunnel junction pressure sensors and methods
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United States of America Patent
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Jun 16, 2009
Grant Date -
May 3, 2007
app pub date -
Oct 28, 2005
filing date -
Oct 28, 2005
priority date (Note) -
Expired
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Abstract
An integrated circuit device is provided which comprises a substrate, a conductive line configured to experience a pressure, and a magnetic tunnel junction (“MTJ”) core formed between the substrate and the current line. The conductive line is configured to move in response to the pressure, and carries a current which generates a magnetic field. The MTJ core has a resistance value which varies based on the magnetic field. The resistance of the MTJ core therefore varies with respect to changes in the pressure. The MTJ core is configured to produce an electrical output signal which varies as a function of the pressure.
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