Deposition methods and stacked film formed thereby
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United States of America Patent
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Jun 9, 2009
Grant Date -
Apr 8, 2004
app pub date -
Dec 10, 2001
filing date -
Mar 9, 2001
priority date (Note) -
Expired
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Abstract
A method of making a film having a uniform thickness and having a crystal axis parallel to a main surface of a substrate is described. In a deposition method, a film is formed by scattering a deposition material from a target (12) surface and growing the scattered deposition material on a main surface (100a) of a substrate (100). The method includes the steps of positioning the substrate (100) into a first state where the distance between one end (100f) and the target (12) is small and the distance between the other end (100e) and the target material (12) is relatively large, forming a first film (110) on the substrate (100) in the first state, positioning the substrate (100) into a second state where the distance between one end (100f) and the target (12) is large and the distance between the other end (100e) and the target (12) is small, and. forming a second film (120) on the first film (110) in the second state.
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