Semiconductor light emitting device having a current narrowing portion and manufacturing method for semiconductor light emitting device
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United States of America Patent
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Jun 2, 2009
Grant Date -
Mar 2, 2006
app pub date -
Aug 22, 2005
filing date -
Aug 25, 2004
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Abstract
A semiconductor light emitting device includes a first conductivity-type first semiconductor layer; an emission layer; a second conductivity-type second semiconductor layer; and a second conductivity-type transparent substrate transparent to light beams from the emission layer and directly bonded to the second semiconductor layer. The transparent substrate has a parallel surface almost parallel to the emission layer on an opposite side of the emission layer, and an inclined surface adjoining the parallel surface and inclined to the parallel surface. Light beams totally reflected on the parallel surface and light beams totally reflected on a side surface of the transparent substrate come incident to the inclined surface at an angle smaller than the critical angle, and emit out of the semiconductor light emitting device.
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