Method and device for improved magnetic field generation during a write operation of a magnetoresistive memory device
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United States of America Patent
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May 26, 2009
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N/A
app pub date -
Nov 6, 2003
filing date -
Nov 28, 2002
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Abstract
Magnetic or magnetoresistive random access memories (MRAMs) are implemented in a variety of arrangements and methods. Using one such arrangement, a matrix is implemented with magnetoresistive memory cells logically organized in rows and columns, each memory cell including a magnetoresistive element. The matrix has a set of column lines, a column line being a continuous conductive strip which is magnetically coupled to the magnetoresistive element of each of the memory cells of a column, wherein each column line has a forward column line and a return column line arranged on opposite sides of the magnetoresistive element and offset from one another for forming a return path for current in that column line.
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