Method for forming an integrated memory device and memory device
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United States of America Patent
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May 12, 2009
Grant Date -
Sep 27, 2007
app pub date -
Mar 27, 2006
filing date -
Mar 27, 2006
priority date (Note) -
Expired
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Abstract
The invention in one of the embodiments refers to a method for forming an integrated memory device, the method including a forming a plurality of bitlines, wherein forming the plurality of bitlines includes forming diffusion lines in a substrate, forming an electrically conductive silicidation barrier layer on a substrate surface exposed, and depositing a conductive layer comprising a metal on the silicidation barrier layer.
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