Method of manufacturing a dielectric layer and corresponding semiconductor device
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United States of America Patent
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May 12, 2009
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app pub date -
Feb 28, 2005
filing date -
Feb 28, 2005
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Abstract
A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in weight to the dielectric layer, forming a non-conductive oxide or nitride having an enthalpy lower than the enthalpy of the first dielectric material such that a leakage current along grain boundaries of the first dielectric material is reduced.
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